DocumentCode
2175390
Title
Nonequilibrium electron and phonon transport in heterostructures for energy conversion
Author
Zeng, Taofang ; Chen, Gang
Author_Institution
Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
fYear
2001
fDate
2001
Firstpage
331
Lastpage
334
Abstract
We establish the first unified model dealing with the transport of electron and phonon in double heterojunction structures with the coexistence of three nonequilibrium processes: (1) nonequilibrium among electrons, (2) nonequilibrium among phonons, and (3) nonequilibrium between electrons and phonons. Using this model, we investigate the energy conversion efficiency based on concurrent thermoelectric and thermionic effects on electrons and size effects on electrons and phonons. It is found that heterostructures can have an equivalent figure of merit higher than the corresponding bulk materials
Keywords
electron-phonon interactions; semiconductor heterojunctions; size effect; thermionic conversion; thermoelectricity; double heterojunction structures; energy conversion; energy conversion efficiency; equivalent figure of merit; nonequilibrium electron transport; nonequilibrium phonon transport; size effects; Electron emission; Energy conversion; Heterojunctions; Particle scattering; Phonons; Power generation; Superlattices; Temperature sensors; Thermoelectricity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location
Beijing
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979899
Filename
979899
Link To Document