• DocumentCode
    2175390
  • Title

    Nonequilibrium electron and phonon transport in heterostructures for energy conversion

  • Author

    Zeng, Taofang ; Chen, Gang

  • Author_Institution
    Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    We establish the first unified model dealing with the transport of electron and phonon in double heterojunction structures with the coexistence of three nonequilibrium processes: (1) nonequilibrium among electrons, (2) nonequilibrium among phonons, and (3) nonequilibrium between electrons and phonons. Using this model, we investigate the energy conversion efficiency based on concurrent thermoelectric and thermionic effects on electrons and size effects on electrons and phonons. It is found that heterostructures can have an equivalent figure of merit higher than the corresponding bulk materials
  • Keywords
    electron-phonon interactions; semiconductor heterojunctions; size effect; thermionic conversion; thermoelectricity; double heterojunction structures; energy conversion; energy conversion efficiency; equivalent figure of merit; nonequilibrium electron transport; nonequilibrium phonon transport; size effects; Electron emission; Energy conversion; Heterojunctions; Particle scattering; Phonons; Power generation; Superlattices; Temperature sensors; Thermoelectricity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979899
  • Filename
    979899