Review of advanced power device models for converter design and simulation

This paper describes the application of compact power device models to converter design and simulation. Models are summarised for both silicon bipolar devices, such as PIN diodes, IGBTs and thyristors, and silicon carbide unipolar devices, such as Schottky diodes and MOSFETs. Several applications using the models are demonstrated, including simulation of converters under long load cycles. Model implementation and parameter extraction are also discussed.