Title :
Compound semiconductor IC´s
Author :
Nakajima, Shigeru
Author_Institution :
Eudyna Devices Inc., Yokohama
Abstract :
This paper presents an overview of compound semiconductor electron devices. GaAs-based MESFET, HEMT, and HBT have deeply penetrated into the markets of communications fields. On the other hands, InP-based HEMT and HBT just are becoming ready for practical use in the ultra-high speed and low power electronics owing to the excellent transport properties. Finally, it will be shown that the wide bandgap material, GaN, has the great potentiality for high power and high frequency electronics
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; reviews; wide band gap semiconductors; GaAs; GaAs-based HBT; GaAs-based HEMT; GaAs-based MESFET; GaN; InP; InP-based HBT; InP-based HEMT; compound semiconductor electron devices; power electronics; transport properties; wide bandgap material; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; MESFETs; Optical amplifiers; Photonic band gap; Power amplifiers; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517569
