Compound semiconductor IC´s

Author

Nakajima, Shigeru

Author_Institution

Eudyna Devices Inc., Yokohama

fYear

2005

fDate

8-12 May 2005

Firstpage

603

Lastpage

608

Abstract

This paper presents an overview of compound semiconductor electron devices. GaAs-based MESFET, HEMT, and HBT have deeply penetrated into the markets of communications fields. On the other hands, InP-based HEMT and HBT just are becoming ready for practical use in the ultra-high speed and low power electronics owing to the excellent transport properties. Finally, it will be shown that the wide bandgap material, GaN, has the great potentiality for high power and high frequency electronics

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; reviews; wide band gap semiconductors; GaAs; GaAs-based HBT; GaAs-based HEMT; GaAs-based MESFET; GaN; InP; InP-based HBT; InP-based HEMT; compound semiconductor electron devices; power electronics; transport properties; wide bandgap material; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; MESFETs; Optical amplifiers; Photonic band gap; Power amplifiers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517569

Filename

1517569

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2175808