• DocumentCode
    2176192
  • Title

    Observation of an anomalous minority carrier trap in n-type InGaAs

  • Author

    Gfroerer, T.H. ; Simov, K.R. ; Wanlass, M.W.

  • Author_Institution
    Davidson Coll., NC
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    657
  • Lastpage
    659
  • Abstract
    Temperature-dependent transient capacitance spectroscopy has revealed a deep hole trap in n-type In0.53Ga0.47As. Thermal activation and tunneling across the p+n junction are used to explain the unusual capture and escape mechanisms of this trap
  • Keywords
    III-V semiconductors; gallium arsenide; hole traps; indium compounds; minority carriers; p-n junctions; In0.53Ga0.47As; capture mechanism; deep hole trap; escape mechanisms; minority carrier trap; n-type semiconductor; temperature-dependent transient capacitance spectroscopy; thermal activation; Capacitance; Delay; Filling; Indium gallium arsenide; Indium phosphide; Spectroscopy; Steady-state; Temperature; Tunneling; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517581
  • Filename
    1517581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2176192