TFSOI technology for portable wireless communication systems

Author

Huang, W.M. ; Tseng, Y.-C. ; Monk, D. ; Diaz, D. ; Ford, J. ; Cheng, S.

Author_Institution

Commun. Products Lab., Motorola Inc., Mesa, AZ, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

421

Lastpage

426

Abstract

Recent growth in the portable wireless communication market has driven semiconductor technologies toward voltage and power reduction. The reduced junction capacitance and near-ideal MOS device characteristics of SOI provides an inherent advantage for low-voltage low-power applications. Substantial progress in applying SOI technology for these applications has been demonstrated in recent years. The quest for a single chip system has also initiated work in developing high frequency and analog SOI circuits. In this paper, the application of Thin-Film-Silicon-On-Insulator (TFSOI) technology for wireless communication systems is reviewed and future development discussed

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit technology; mobile radio; silicon-on-insulator; Si; TFSOI technology; junction capacitance reduction; portable wireless communication systems; power reduction; thin film SOI technology; voltage reduction; CMOS technology; Capacitance; Circuit synthesis; Etching; Implants; Isolation technology; MOSFETs; Silicon; Threshold voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606658

Filename

606658