Title :
MOSFET stair-shaped I-V circuit and applications
Author :
Jun, Sibum ; Ahn, Su Jin
Author_Institution :
LG Semicon Co. Ltd., Seoul, South Korea
fDate :
31 May-3 Jun 1998
Abstract :
A new circuit block having a stair-shaped I-V curve is described. The proposed circuit is based on novel configuration of three cascode branches. Furthermore, 4-level quantizing inverter and 4-level latch utilizing the proposed circuit are also presented. Unlike the previous work, these works are compatible with a standard CMOS technology
Keywords :
MOSFET circuits; flip-flops; logic gates; quantisation (signal); CMOS technology; MOSFET stair-shaped I-V circuit; cascode branch; four-level latch; four-level quantizing inverter; Aluminum; CMOS technology; Control systems; FETs; Fabrication; Inverters; Latches; MOSFET circuits; Registers; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706931