Title :
Enhanced wire bond transition from die to chip carrier for 3.1-10.6 GHz UWB applications
Author :
Fourquin, Olivier ; Cubillo, Joseph Romen ; Gaubert, Jean ; Bourdel, Sylvain ; Battista, Marc
Author_Institution :
CNRS, Aix-Marseille Univ., France
Abstract :
We present in this paper a way to optimize the bandwidth of standard wire bond (WB) transition from die to chip carrier. This optimization is based on a simple lumped model of the WB transition taking into account the common ground impedance between the die and the chip carrier levels. The model also includes the magnetic coupling between the signal WB and the grounds WB. This model is validated by full wave electromagnetic simulations. On the basis of this lumped model simple guiding rules to increase the transition bandwidth are given. The signal integrity of the WB transition is enhanced and a return loss greater than 15 dB is obtained in the 3.1-10.6 GHz frequency band with standard WB lengths.
Keywords :
CMOS integrated circuits; antennas; coplanar transmission lines; integrated circuit packaging; optimisation; ultra wideband communication; UWB antenna; chip carrier levels; common ground impedance; die carrier levels; frequency 3.1 GHz to 10.6 GHz; full wave electromagnetic simulations; ground coplanar transmission line; insertion loss; lumped electrical model; magnetic coupling; optimization; return loss; standard CMOS chip; standard wire bond transition; ultrawide-band system applications; Bandwidth; Bonding; Costs; Electromagnetic coupling; Electromagnetic modeling; Frequency; Impedance; Insertion loss; Packaging; Wire;
Conference_Titel :
Advanced Packaging and Systems Symposium, 2008. EDAPS 2008. Electrical Design of
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-2633-1
Electronic_ISBN :
978-1-4244-2634-8
DOI :
10.1109/EDAPS.2008.4736039
