• DocumentCode
    2177887
  • Title

    CMOS and BiCMOS class AB structures for switched-current applications

  • Author

    Oliaei, O. ; Loumeau, P. ; Bouchakour, R.

  • Author_Institution
    Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
  • Volume
    1
  • fYear
    1997
  • fDate
    3-6 Aug 1997
  • Firstpage
    260
  • Abstract
    The performance limitations of SI-circuits is essentially related to the non-linear behavior of SI-memory cells. Three CMOS and one BiCMOS class AB current memory cells for SI applications are proposed. The main advantages of the class AB cells are error linearization, high dynamic range and low consumption
  • Keywords
    BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; analogue processing circuits; analogue storage; sampled data circuits; switched current circuits; BiCMOS structures; CMOS structures; SI circuits; SI memory cells; class AB structures; current memory cells; error linearization; high dynamic range; low consumption; nonlinear behavior; switched-current applications; BiCMOS integrated circuits; Clocks; Dynamic range; Harmonic distortion; Mirrors; Sampled data circuits; Switches; Transconductance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
  • Conference_Location
    Sacramento, CA
  • Print_ISBN
    0-7803-3694-1
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1997.666083
  • Filename
    666083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2177887