Title :
CMOS and BiCMOS class AB structures for switched-current applications
Author :
Oliaei, O. ; Loumeau, P. ; Bouchakour, R.
Author_Institution :
Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
The performance limitations of SI-circuits is essentially related to the non-linear behavior of SI-memory cells. Three CMOS and one BiCMOS class AB current memory cells for SI applications are proposed. The main advantages of the class AB cells are error linearization, high dynamic range and low consumption
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; analogue processing circuits; analogue storage; sampled data circuits; switched current circuits; BiCMOS structures; CMOS structures; SI circuits; SI memory cells; class AB structures; current memory cells; error linearization; high dynamic range; low consumption; nonlinear behavior; switched-current applications; BiCMOS integrated circuits; Clocks; Dynamic range; Harmonic distortion; Mirrors; Sampled data circuits; Switches; Transconductance; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.666083
