Title :
Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers
Author :
Weerakkody, A.D. ; Sedghi, N. ; Zhan, X. ; Mitrovic, I.Z. ; Hall, S.
Author_Institution :
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK
fDate :
June 29 2015-July 2 2015
Abstract :
This paper investigates the dominant conduction mechanisms in two bi-layer Ta2O5-Al2O3 structures fabricated by atomic layer deposition and rf sputtering. In depth experimental (electrical and optical) and theoretical analysis have been conducted to demonstrate the dominancy of quantum mechanical tunnelling, a desirable conduction mechanism for high-speed nanorectifier device operation.
Keywords :
Aluminum oxide; Electric fields; Electrodes; Permittivity; Temperature dependence; Tunneling; Direct tunnelling; Fowler-Nordheim tunnelling; Metal-insulator-insulator-metal; Schottky emission; Spectroscopic ellipsometry; conduction mechanisms;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location :
Glasgow, United Kingdom
DOI :
10.1109/PRIME.2015.7251352
