• DocumentCode
    2178461
  • Title

    Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers

  • Author

    Weerakkody, A.D. ; Sedghi, N. ; Zhan, X. ; Mitrovic, I.Z. ; Hall, S.

  • Author_Institution
    Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    This paper investigates the dominant conduction mechanisms in two bi-layer Ta2O5-Al2O3 structures fabricated by atomic layer deposition and rf sputtering. In depth experimental (electrical and optical) and theoretical analysis have been conducted to demonstrate the dominancy of quantum mechanical tunnelling, a desirable conduction mechanism for high-speed nanorectifier device operation.
  • Keywords
    Aluminum oxide; Electric fields; Electrodes; Permittivity; Temperature dependence; Tunneling; Direct tunnelling; Fowler-Nordheim tunnelling; Metal-insulator-insulator-metal; Schottky emission; Spectroscopic ellipsometry; conduction mechanisms;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
  • Conference_Location
    Glasgow, United Kingdom
  • Type

    conf

  • DOI
    10.1109/PRIME.2015.7251352
  • Filename
    7251352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2178461