Title :
VLSI design of CMOS image-reject LNA for 950-MHz wireless receivers
Author :
Youssef, A. A Moneim ; Sharaf, K. ; Ragaie, H.F. ; Ibrahim, M. Marzouk
Author_Institution :
Integrated Circuit Lab., Ain Shams Univ., Cairo, Egypt
Abstract :
This paper presents the design of a CMOS integrated image reject low noise amplifier (IR-LNA) for application to 950 MHz low power, low voltage wireless receivers. A second-order active band-pass filter using an integrated inductor is incorporated into the LNA core to reject the 1.6 GHz image signal without achieving high Q values. The circuit proves to be suitable for highly integrated CMOS receivers employing wideband IF architecture. The IR-LNA designed in a 0.6 μm AMS CMOS technology has a 10 dB power gain, 2.4 dB noise figure, -10 dBm input IP3, and a maximum of 65 dB image rejection. The total power consumption at 1.5 V supply is 10 mW.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF filters; UHF integrated circuits; active filters; band-pass filters; integrated circuit design; integrated circuit noise; low-power electronics; radio receivers; thin film inductors; 0.6 micron; 1.5 V; 1.6 GHz; 10 dB; 10 mW; 2.4 dB; 950 MHz; AMS CMOS technology; CMOS image-reject LNA; CMOS integrated image reject low noise amplifier; CMOS receivers; IR-LNA; LNA core; Q values; VLSI design; image signal rejection; input IP3; integrated inductor; low power low voltage receivers; maximum image rejection; noise figure; power consumption; power gain; power supply; second-order active band-pass filter; wideband IF architecture; wireless receivers; Active inductors; Band pass filters; CMOS technology; Gain; Integrated circuit technology; Low voltage; Low-noise amplifiers; Noise figure; Very large scale integration; Wideband;
Conference_Titel :
Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on
Print_ISBN :
5-7422-0260-1
DOI :
10.1109/OCCSC.2002.1029108
