Title :
Static-induction transistor for very-high-speed ICs
Author :
Konoplev, Boris G. ; Ryndin, Eugeny A.
Author_Institution :
Taganrog State Univ. of Radio-Eng., Russia
Abstract :
The structure and model of a static-induction transistor (SIT) with Schottky barrier for very-high-speed ICs have been developed. Simulation analysis results of IC logic elements based on complementary SITs is provided. The prospects of VLSI realization based on complementary SITs is discussed.
Keywords :
Schottky barriers; circuit simulation; integrated circuit design; integrated circuit modelling; logic circuits; logic design; semiconductor device models; static induction transistors; very high speed integrated circuits; IC logic element simulation analysis; Schottky barrier; VLSI realization; VLSI very-high-speed logic elements; complementary SIT; high frequency SIT structure/model; high frequency static-induction transistors; Ballistic transport; Doping; Frequency; Logic; Schottky barriers; Semiconductor process modeling; Temperature dependence; Tunneling; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on
Print_ISBN :
5-7422-0260-1
DOI :
10.1109/OCCSC.2002.1029127
