A wide-band small-signal model from 2 to 85 GHz

Author

Chen, Shen-Whan ; Wang, Shuming T. ; Lin, Yung-Chih

Author_Institution

Dept. of Commun. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

3526

Lastpage

3530

Abstract

In this paper, a new extraction method is developed for creating a very wide band, from 2 to 85 GHZ, small-signal model for interdigitated, low noise, pseudomorphic high electron mobility transistor (pHEMT). By applying the scalability nature of transistor, a physically related small-signal model is obtained through curve-fitting optimization. This new extraction method also eliminates the need of a de-embedding procedure.

Keywords

UHF field effect transistors; curve fitting; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; optimisation; curve-fitting optimization; deembedding procedure; extraction method; frequency 2 GHz to 85 GHz; interdigitated low noise pHEMT; interdigitated low noise pseudomorphic high electron mobility transistor; transistor scalability nature; wide-band small-signal model; Integrated circuit modeling; Logic gates; Microwave FETs; Microwave circuits; Scattering parameters; Parameter Extraction; Scalability; Small-Signal Model; Wide-Band; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6066704

Filename

6066704