DocumentCode
2180201
Title
Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment
Author
Pong Wing Tai ; Wong, Alfred
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, China
fYear
2002
fDate
2002
Firstpage
31
Lastpage
34
Abstract
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.
Keywords
aberrations; integrated circuit manufacture; integrated circuit technology; masks; nanotechnology; optical focusing; photoresists; ultraviolet lithography; 157 nm; 50 nm; NPL quantification; UV optical lithography; aberration levels; device manufacture; focus control; normalized process latitude; photolithography; photomask making; photoresist contrast; processing technology acceleration; Acceleration; Focusing; Image quality; Integrated circuit technology; Lithography; Manufacturing processes; Optical devices; Optical sensors; Resists; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN
0-7803-7429-0
Type
conf
DOI
10.1109/HKEDM.2002.1029150
Filename
1029150
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