• DocumentCode
    2180201
  • Title

    Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment

  • Author

    Pong Wing Tai ; Wong, Alfred

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, China
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.
  • Keywords
    aberrations; integrated circuit manufacture; integrated circuit technology; masks; nanotechnology; optical focusing; photoresists; ultraviolet lithography; 157 nm; 50 nm; NPL quantification; UV optical lithography; aberration levels; device manufacture; focus control; normalized process latitude; photolithography; photomask making; photoresist contrast; processing technology acceleration; Acceleration; Focusing; Image quality; Integrated circuit technology; Lithography; Manufacturing processes; Optical devices; Optical sensors; Resists; Robustness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
  • Print_ISBN
    0-7803-7429-0
  • Type

    conf

  • DOI
    10.1109/HKEDM.2002.1029150
  • Filename
    1029150