Title :
Electrical characteristics of novel hafnium oxide film
Author :
Ng, K.L. ; Zhan, N. ; Poon, M.C. ; Kok, C.W. ; Chan, M. ; Wong, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.
Keywords :
MOS capacitors; MOSFET; X-ray photoelectron spectra; capacitance; dielectric thin films; electric current; hafnium compounds; integrated circuit testing; interface states; permittivity; C-V measurement; HfO2-Si; I-V measurement; O2; Si; XPS; capacitance-voltage measurement; current-voltage measurement; device operation; direct sputtering; electrical characteristics; hafnium oxide film; hafnium oxide-silicon substrate interface; hafnium target; interface layer charge traps; oxygen ambient; Annealing; Dielectric materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables; Hafnium oxide; Silicon; Sputtering; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN :
0-7803-7429-0
DOI :
10.1109/HKEDM.2002.1029155
