DocumentCode
2182298
Title
IWCE 2009 - Title page
fYear
2009
fDate
27-29 May 2009
Abstract
The following topics are dealt with: semiconductor technology; Si PMOS; nanowire MOS transistors; AlGaN/GaN HEMT; finite element method; ballistic nanowire MOSFET; quantum transport model; Monte Carlo method; quantum dot devices; boron-doped graphene FET; and graphene nanoribbon resonant tunneling diodes.
Keywords
MOSFET; Monte Carlo methods; aluminium compounds; boron; elemental semiconductors; finite element analysis; molecular electronics; silicon; AlGaN-GaN; B; C; Monte Carlo method; Si; Si PMOS; ballistic nanowire MOSFET; boron-doped graphene FET; finite element method; graphene nanoribbon resonant tunneling diodes; nanowire MOS transistors; quantum dot devices; quantum transport model; semiconductor technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Type
conf
DOI
10.1109/IWCE.2009.5091071
Filename
5091071
Link To Document