Title :
A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs
Author :
Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing
Abstract :
In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it is summarized that the tunneling at source side dominates the carrier transport.
Keywords :
MOSFET; Monte Carlo methods; Schottky barriers; tunnelling; MOSFET; Monte Carlo simulator; ambipolar Schottky barrier; carrier transport; thermal emission; tunneling; Charge carrier processes; Circuits; Electron emission; Laboratories; MOSFETs; Microelectronics; Monte Carlo methods; Schottky barriers; Silicon; Tunneling;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091081
