Title :
Fabrication and in-situ evaluation of copper TSV interconnection
Author :
Ma, Shenglin ; Zhu, Yunhui ; Sun, Xin ; Miao, Min ; Chen, Jin ; Jin, Yufeng
Author_Institution :
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
Abstract :
In this paper, a process for making copper Though-Silicon-Via (TSV) interconnection is developed. In order to improve the yield of the process, challenging issues in the process is discussed and typical failures in the TSV interconnection are summarized. A measuring scheme is proposed to monitor these failures in the process and simulation is performed to testify the feasibility of the method.
Keywords :
copper; integrated circuit interconnections; integrated circuit yield; TSV failures; copper TSV interconnection; integrated circuit yield; though silicon via; Copper; Fabrication; Filling; Resistance; Through-silicon vias; Tin;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066801
