Decoherence Due to Electron-Phonon Scattering in Semiconductor Nanodevices

In this paper we discuss the effect of decoherence induced by electron-phonon scattering at room temperature in nanoscale devices where quantum transport effects play an important role as the RTD and the nano-MOSFET. The analysis is carried out from results of quantum Monte Carlo simulation based on the Wigner´s function formalism. It puts forward the scattering-induced localization of electrons and the transition between the quantum and the semi-classical transport regimes in RTD. At last, the backscattering theory in MOSFET is investigated in the context of decohrence.