Numerical Simulation of a DNA Sensor Based on the CNT-Gold Island Structure

Author

Choe, Gyu-sik ; Woo, Jun-Myung ; Park, Young June ; Chang, Young Wook ; Oh, Jeseung ; Yoo, Kyung-Hwa

Author_Institution

Sch. of Electr. Eng. & Nano-Syst. Inst.(NSI-NCRC), Seoul Nat. Univ., Seoul

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

A numerical simulation has been performed for the DNA sensors based on the field-effect-transistor (FET) structure of a CNT with the gold island- attached on the CNT tube. The model uses the Poisson-drift-diffusion theory for the CNT transistor and considers the charge exchange between the interfaces between the CNT and gold island, gold and the linker molecules. In order to compare with experiments, an example device is simulated to predict the response of the sensor to the target DNA´s in both the air and aqueous solution.

Keywords

DNA; biosensors; carbon nanotubes; field effect transistors; gold; nanobiotechnology; nanotube devices; numerical analysis; Au; Au-C; DNA sensor; Poisson-drift-diffusion theory; carbon nanotubes; charge exchange; field-effect-transistor structure; gold island structure; numerical simulation; Boundary conditions; Charge carrier processes; DNA; Electrodes; Electrostatics; FETs; Gold; Joining processes; Numerical simulation; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091132

Filename

5091132