Radial Boundary Forces-Modulated Valence Band Structure of Ge (110) Nanowire

Author

Xu, Honghua ; He, Yuhui ; Zhao, Yuning ; Du, Gang ; Kang, Jinfeng ; Han, Ruqi ; Liu, Xiaoyan ; Fan, Chun

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

For the radial boundary force induced in the process, the strain energy distribution and strain tensor components in Ge (110) nanowire (NW) are calculated by finite element method. Based on the strain distribution, we compute valence band structures with different radial forces. As increasing force values, top valence subbands shift downwards. The influence on the corresponding effective masses and density of states are also investigated.

Keywords

effective mass; elemental semiconductors; germanium; nanowires; semiconductor quantum wires; valence bands; Ge; Ge (110) nanowire; density of state; effective mass; finite element method; modulated valence band structure; nanowire structure; radial boundary force; strain energy distribution; strain tensor component; Capacitive sensors; Distributed computing; Effective mass; Finite element methods; Germanium; Insulation; Laboratories; Microelectronics; Nanoscale devices; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091142

Filename

5091142