Semiconductor Technology-Trends, Challenges and Opportunities

Author

Patton, Gary

Author_Institution

Semicond. Res. & Dev. Center, IBM Syst. & Technol. Group, Hopewell Junction, NY

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

Traditional CMOS scaling, which was driving device performance during the past several decades, is approaching atomistic and quantum-mechanical boundaries. Semiconductor R&D innovation have never been more critical to drive technology scaling and performance. The development of leading-edge silicon technology requires long-term investments and collaboration in fundamental research to solve the significant challenges of the future technology nodes at an affordable cost. Computational techniques will be a critical tool in this effort. This talk will describe the semiconductor technology future directions, challenges and opportunities.

Keywords

CMOS integrated circuits; innovation management; semiconductor technology; CMOS scaling; computational techniques; leading-edge silicon technology; semiconductor innovation; semiconductor technology; CMOS technology; Capacitance; Collaboration; Costs; Dielectric materials; High K dielectric materials; Integrated circuit interconnections; Investments; Silicon compounds; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091147

Filename

5091147