Title :
RF noise in deep sub-/spl mu/m MOSFETs and proposed solution
Author :
Huang, C.H. ; Lai, C.H. ; Hsieh, J.C. ; Liu, J. ; Chin, A.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Anomalous dependence of finger number on noise figure (NF) is observed for 0.18 /spl mu/m and 0.13 /spl mu/m MOSFETs. A lowest NF of 0.93 dB is measured for 0.18 /spl mu/m MOSFET at 5.8 GHz using 50 fingers but increases with either increasing or decreasing finger number. The NF of 0.13 /spl mu/m devices have larger value and continuously decreases with increasing finger number. This is due to the combined effect of reducing gate resistance and increasing substrate loss with increasing finger number.
Keywords :
MOSFET; electric resistance; losses; microwave field effect transistors; semiconductor device measurement; semiconductor device noise; 0.13 micron; 0.18 micron; 0.93 dB; 5.8 GHz; MOSFET; NF; RF noise; finger number; gate resistance; noise figure; substrate loss; Circuit simulation; Electrical resistance measurement; Equivalent circuits; Fingers; Frequency dependence; MOSFETs; Noise figure; Noise measurement; Radio frequency; Scattering parameters;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029519
