The effect of scattering on drive current of nanotransistors

In the nanoscale regime, the electron mean free path is comparable to the transistor channel length. Therefore, the electron transport is neither ballistic nor diffusive as quantum coherence is partially destroyed by scattering on phonons, surface roughness and impurities. In this work we model electron-phonon scattering within a quantum mechanical approach using a non-equilibrium Green´s function method. Based on the calculations, we show that the resistance per unit length in the source side is much larger than in the drain side. Thus, in order to achieve large drive current in nanotransistors, it is important to keep the source extension region short. We model a nanoscale double gate MOSFET as it is an important candidate for a scaled-down transistor.