Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation

Author

Altermatt, P.P. ; Geelhaar, F. ; Trupke, T. ; Dai, X. ; Neisser, A. ; Daub, E.

Author_Institution

Dept. Solar Energy Res., Inst. for Solid-State Phys., Hannover, Germany

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

47

Lastpage

48

Abstract

The radiative recombination coefficient B in crystalline bulk silicon is enhanced by the Coulomb attraction between electrons and holes. This effect and hence B - is reduced at high carrier densities due to screening. We measure and numerically calculate B as a function of injection density, and with the gained model we simulate an experiment in order to extract the Coulomb-enhancement of Auger recombination.

Keywords

Auger effect; carrier density; electron-hole recombination; elemental semiconductors; numerical analysis; silicon; Auger recombination; Coulomb attraction; Coulomb-enhancement; Si; carrier density; crystalline bulk silicon; electrons; holes; injection density; spontaneous radiative recombination coefficient; Analytical models; Charge carrier density; Charge carrier processes; Crystallization; Current measurement; Density measurement; Gain measurement; Radiative recombination; Silicon; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518128

Filename

1518128