DocumentCode
2189727
Title
A wideband AlGaAs/GaAs heterojunction bipolar transistor amplifier optimized for low-near-carrier-noise applications up to 18 GHz
Author
Costa, D. ; Khatibzadeh, A.
Author_Institution
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
1645
Abstract
A wideband AlGaAs/GaAs HBT Darlington feedback amplifier has been optimized for low near-carrier noise. The amplifier has 10 dB gain and a 3 dB bandwidth of 18 GHz. The amplifier has a residual phase noise of -156 dBc/Hz at 1 KHz offset from the carrier (2.23 GHz). This near-carrier performance is superior to that of amplifiers realized with other device technologies capable of similar bandwidths.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 10 dB; 18 GHz; AlGaAs-GaAs; AlGaAs/GaAs; Darlington feedback amplifier; heterojunction bipolar transistor; low-near-carrier-noise applications; residual phase noise; wideband amplifier; Bandwidth; Broadband amplifiers; Feedback amplifiers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335126
Filename
335126
Link To Document