Recent results on particle detection with epitaxial SiC Schottky diodes

Author

Bruzzi, M. ; Hartjes, F. ; Lagomarsino, S. ; Nava, F. ; Sciortino, S. ; Varnni, P.

Author_Institution

Dipt. di Energetica, I.N.F.N., Firenze, Italy

Volume

1

fYear

2002

fDate

10-16 Nov. 2002

Firstpage

14

Abstract

Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n⁺ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi ⁹⁰Sr β-source and with 5.48 MeV α-particles from ²⁴¹Am. The response of the SiC devices, investigated over a range of thickness up to ∼20μm, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.

Keywords

Schottky diodes; alpha-particle detection; beta-ray detection; semiconductor counters; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; α-particles; β-source; 0 to 20 micron; 0.0001 Ci; 4H-SiC epitaxial n-type layer; 4H-SiC n⁺ type substrate; 5.48 MeV; SiC; charge collection efficiency; epitaxial SiC Schottky diodes; particle detection; Leak detection; Position sensitive particle detectors; Radiation detectors; Schottky diodes; Semiconductor radiation detectors; Silicon carbide; Silicon radiation detectors; Substrates; Telephony; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2002 IEEE

Print_ISBN

0-7803-7636-6

Type

conf

DOI

10.1109/NSSMIC.2002.1239258

Filename

1239258