DocumentCode :
2190475
Title :
Modeling of bidirectional regime in semiconductor ring lasers
Author :
Passaro, Vittorio M N ; De Leonardis, Francesco
Author_Institution :
Dipt. di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
fYear :
2005
fDate :
19-22 Sept. 2005
Firstpage :
115
Lastpage :
116
Abstract :
A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.
Keywords :
backscatter; laser stability; ring lasers; semiconductor lasers; backscattering; bidirectional regime; linear effect; nonlinear effect; semiconductor ring laser modeling; stability criterion; Backscatter; Difference equations; Differential equations; Laser modes; Laser theory; Maxwell equations; Quantum well devices; Ring lasers; Semiconductor lasers; Stability criteria;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
Type :
conf
DOI :
10.1109/NUSOD.2005.1518162
Filename :
1518162
Link To Document :
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