DocumentCode :
2191135
Title :
Design and performance of fast high-voltage EPI-diodes
Author :
Cooper, R. ; Jaggers, K.
Author_Institution :
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
fYear :
1983
fDate :
6-9 June 1983
Firstpage :
150
Lastpage :
153
Abstract :
The design and performance of power rectifiers based on epitaxial silicon are discussed. It is shown that, by using epitaxial material, diodes can be designed showing reverse recovery times of less than 100 ns with reverse blocking to 1000 volt without increase of forward conduction losses.
Keywords :
Current measurement; Gold; Junctions; Rectifiers; Substrates; Switches; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1983.7069852
Filename :
7069852
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2191135
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