Title :
Failure and switching mechanisms in semiconductor P-N junction devices
Author :
Vee, J. ; Orvis, W. ; Khanaka, G. ; Lair, D.
Author_Institution :
Lawrence Livermore National Laboratory, Livermore, California 94550
Abstract :
We use theoretical results obtained with computer models to interpret existing experimental data related to second breakdown mechanisms. We show that if you solve the complete set of transport equations for electrons, holes, and heat, you can model three kinds of second breakdown phenomena: current mode (CSB), thermal mode (TSB), and current?? thermal (CSB-TSB) mode second breakdown. We also discuss the effect of the input voltage pulse shape on the current switching time of a p-n junction device.
Keywords :
Electric breakdown; Heating; Mathematical model; P-n junctions; Switches;
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
DOI :
10.1109/PESC.1983.7069853
