Title :
Extraction based model for GaAs MESFET switches
Author :
Ehoud, A. ; Dunleavy, L.P. ; Lazar, S.C. ; Branson, R.E.
Author_Institution :
Univ. of South Florida, Tampa, FL, USA
Abstract :
A simple method for extracting equivalent circuit parameters for series and shunt GaAs FET switches was developed. To the authors knowledge, this is the first reported extraction based model for MMIC compatible switches. The circuit elements are extracted from one set of S-parameter measurements, and scale with gate geometry. Good agreement is shown between simulated and model results for 0.5 /spl mu/m by 300 /spl mu/m series and shunt GaAs FET switches across the 0.45-26.5 GHz band.<>
Keywords :
III-V semiconductors; MMIC; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor switches; solid-state microwave devices; 0.45 to 26.5 GHz; 0.5 micron; GaAs; MESFET switches; MMIC compatible switches; S-parameter measurements; SHF; UHF; equivalent circuit parameters extraction; extraction based model; series type; shunt type; Circuit simulation; Equivalent circuits; FETs; Gallium arsenide; Geometry; MESFETs; MMICs; Scattering parameters; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335221
