An improved CAD oriented FET model for large-signal and noise applications

Author

Portilla, J. ; Quere, R. ; Obregon, J.

Author_Institution

Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France

fYear

1994

fDate

23-27 May 1994

Firstpage

849

Abstract

A novel equivalent circuit for FETs, based on a two region, ohmic and velocity saturated, description of the channel is proposed. The model has a topology close to the main physical phenomena which determine the device behaviour, thus the parameters can be deduced in a natural way. Analytical determination for the new electrical model elements holds so that there is no increase in the extraction cost. The model applied to commercial FETs and HEMTs demonstrates an improved accuracy over the classical models and, at the same time, opens interesting perspectives in the fields of nonlinear and noise electrical modelling for CAD.<>

Keywords

CAD; Schottky gate field effect transistors; electronic engineering computing; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; CAD oriented FET model; HEMTs; electrical model; equivalent circuit; large-signal applications; noise applications; Circuit noise; Circuit topology; Costs; Equivalent circuits; FETs; HEMTs; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335224

Filename

335224