Suppression of poly emitter bipolar hot carrier effects in an advanced BiCMOS technology

Author

Joshi, S.P.

Author_Institution

Nat. Semicond. Corp., Puyallup, WA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

144

Lastpage

147

Abstract

Bipolar hot carrier effects in phosphorous and arsenic poly emitter transistors are studied. The role of avalanche and tunnel current components in transistor current gain degradation is identified. The study indicates that transistors with tunneling emitter-phase junctions are less susceptible to current gain degradation. By optimization of emitter-base junction dopant profiles, the reliability of high-performance bipolar transistors can be significantly enhanced

Keywords

BIMOS integrated circuits; bipolar transistors; doping profiles; elemental semiconductors; hot carriers; integrated circuit technology; semiconductor device models; semiconductor doping; silicon; advanced BiCMOS technology; avalanche current components; emitter-base junction dopant profiles; high-performance bipolar transistors; hot carrier effects suppression; optimization; poly emitter bipolar hot carrier effects; polycrystalline Si:P, As emitters; polysilicon emitters; reliability; transistor current gain degradation; tunnel current components; tunneling emitter-phase junctions; Automatic control; BiCMOS integrated circuits; Bipolar transistors; Boron; Degradation; Hot carrier effects; Hot carriers; Implants; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69478

Filename

69478