Title :
GaAs rectification-an enabling technology for high frequency operation of power MOS-gated transistors
Author :
Anderson, Samuel
Author_Institution :
Optoelectron., Signal Products Div., Motorola Inc., Phoenix, AZ, USA
Abstract :
This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; power MOSFET; power factor correction; rectification; solid-state rectifiers; 600 V; GaAs; III-V semiconductors; enabling technology; high frequency operation; output rectification; performance improvement; power MOS-gated transistors; power factor correction; switching performance; synchronous rectification; Buildings; Circuits; Frequency; Gallium arsenide; Power factor correction; Power supplies; Rectifiers; Silicon; Stress; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509445