DocumentCode :
2192631
Title :
High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors
Author :
Arnold, E. ; Letavic, T. ; Merchant, S. ; Bhimnathwala, H.
Author_Institution :
Philips Electron. North America Corp., Philips Lab., Briarcliff Manor, NY, USA
fYear :
1996
fDate :
20-23 May 1996
Firstpage :
93
Lastpage :
96
Abstract :
High-temperature off-state and on-state characteristics of bulk-Si and thin-SOI RESURF LDMOS transistors were studied experimentally and theoretically. The off-state leakage current in the SOI devices was only 1.5 nA/μm at 300°C. The increase of on-resistance with temperature in the SOI devices is smaller than in the bulk-Si devices because of the heavier doping dictated by the RESURF principle. The reverse recovery time of the SOI device shows only slight temperature dependence. The results of this study indicate that LDMOS transistors fabricated in thin SOI layers are well suited for high-temperature power IC applications
Keywords :
high-temperature effects; power MOSFET; silicon; silicon-on-insulator; 300 C; RESURF LDMOS transistor; SOI device; Si; bulk-Si device; doping; high-temperature performance; leakage current; off-state characteristics; on-resistance; on-state characteristics; power IC; reverse recovery time; Doping; Laboratories; Leakage current; North America; Power integrated circuits; Roentgenium; Temperature dependence; Transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
ISSN :
1063-6854
Print_ISBN :
0-7803-3106-0
Type :
conf
DOI :
10.1109/ISPSD.1996.509456
Filename :
509456
Link To Document :
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