Title :
High frequency bipolar junction transistor modeling
Author :
Xu, David Q. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
A BJT is modeled using nonlinear CAD tool. Excellent agreement between the measurement and the modeled data has been achieved. This paper provides a general guideline for nonlinear device modeling
Keywords :
bipolar transistors; circuit optimisation; digital simulation; nonlinear network synthesis; semiconductor device models; BJT; VCO; bipolar junction transistor; modeled data; modeling; nonlinear CAD; nonlinear device modeling; Circuit simulation; Circuit synthesis; Computational modeling; Design automation; Guidelines; Microwave devices; Power system modeling; Predictive models; Radio frequency; Scattering parameters;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.666205
