Inside view

We have fabricated non-volatile physically flexible memristors using ink-jet printed conductors on a flexible plastic substrate. The devices exhibit bipolar resistive switching (BRS) behaviour and have high resistive state (HRS) and low resistive state (LRS), which is explained by the migration of oxygen between (higher resistance) copper oxide and (lower resistance) silver oxide. To explore the performance of our memristors, we tested the repeatability and persistence of the HRS and LRS. We also fabricated other control groups to prove that copper oxide plays a significant role in the resistive switching behaviour of our devices. These memristors have features of being physically flexible, compatible with flexible electronic technologies and low cost, low-temperature fabrication and low-power operation.