Title :
The effect of DMOS cell geometry on the integrated current sensors of high-voltage power MOSFETs
Author :
Zhu, R.H. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The integrated current-sensing power MOSFET is used in power electronics to implement system control, protective and diagnostic function. This paper compares integrated current-sensing power MOSFETs with the square (SQ) and atomic-lattice-layout (ALL) design. It is shown that the ALL design offers better performance than that with the SQ cell design
Keywords :
electric current measurement; electric sensing devices; power MOSFET; DMOS cell geometry; HV MOSFET; atomic-lattice-layout design; high-voltage power MOSFETs; integrated current sensors; power electronics; square cell design; Bridge circuits; Current measurement; Electrical resistance measurement; Geometry; MOSFETs; Oscilloscopes; Probes; Resistors; Temperature sensors; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509478
