Simplified nonlinear model for the intermodulation analysis of MESFET mixers

Author

Sotli Peng ; McCleer, P.J. ; Haddad, G.I.

Author_Institution

Center for High Frequency Microelectronics, Michigan Univ., Ann Arbor, MI, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1575

Abstract

A simplified nonlinear model is proposed for intermodulation (IM) analysis of MESFET gate mixers. The accuracy of the model has been verified experimentally using two different MESFET mixers at X-band. Both tests show excellent agreement between measurement and simulated data for second- and third-order IM performance. The simplified model is based on modeling the derivative of the device transconductance by the sum of a Gaussian function and a linear function of the gate voltage. Drain bias dependence is ignored. The advantage of this model is that the fitting parameters can be easily determined from a nonlinear characterization of the device at low frequencies.<>

Keywords

Schottky gate field effect transistors; intermodulation; mixers (circuits); semiconductor device models; solid-state microwave devices; Gaussian function; MESFET mixers; X-band; device transconductance; fitting parameters; intermodulation analysis; linear function; nonlinear model; second-order performance; simulation; third-order performance; Frequency; MESFETs; Testing; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335273

Filename

335273