• DocumentCode
    2193259
  • Title

    Light triggered 8 kV thyristors with a new type of integrated breakover diode

  • Author

    Schulze, H.-J. ; Ruff, M. ; Baur, B. ; Pfirsch, F. ; Kabza, H. ; Kellner, U.

  • Author_Institution
    Corp. Res. & Dev., Siemens AG, Munich, Germany
  • fYear
    1996
  • fDate
    20-23 May 1996
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    Light triggered 8 kV thyristors with a new type of integrated breakover diode were fabricated. This breakover diode is realized by a well-defined curvature of the junction between the p-base and the n-base. For this purpose, a “masked” Al diffusion is used. Five amplifying gate stages guarantee a safe turn-on behavior also in the case of overvoltage triggering. Additionally, a novel resistor structure, which is also controlled by the masked Al diffusion, was integrated between the amplifying gate stages
  • Keywords
    overvoltage; photothyristors; power semiconductor switches; 8 kV; amplifying gate stages; integrated breakover diode; light triggered thyristors; overvoltage triggering; resistor structure; turn-on behavior; Artificial intelligence; Board of Directors; Charge carrier lifetime; Protection; Resistors; Semiconductor diodes; Surface cleaning; Thyristors; Valves; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
  • Conference_Location
    Maui, HI
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3106-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1996.509480
  • Filename
    509480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2193259