Title :
A copper drift-model for the low-κ polymer DVS-BCB
Author :
Hoernig, T. ; Melzer, K. ; Schubert, U. ; Geisler, H. ; Bartha, J.W.
Author_Institution :
Infineon Technol. Dresden AG, Germany
Abstract :
To prove the reliability of DVS-BCB (Benzocyclobutene) as an interlevel-dielectric in copper-metallization-systems we investigated the extreme low copper drift rate in this spin-on-polymer. BTS-Sequences (B_ias-T_emperature S_tress) were applied to accelerate the copper drift in the polymer. Using experimentally obtained data, an equation was created to compute the copper drift rate in the DVS-BCB as a function of the applied voltage and the temperature of the polymer. The copper drift rate in the DVS-BCB, Metal-Insulator-Substrat-structures (MIS) were determined by Capacitance-Voltage-measurements (CV). The results obtained by this method are supported by a Secondary ion Mass Spectroscopy-analysis (SIMS). A linear relationship between the logarithmic copper drift rate as a function of the applied voltage and the temperature of the polymer was determined. The experimental data used to establish the equation of the drift rate covers temperatures and electrical conditions used in integrated circuits under operation
Keywords :
copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallization; polymer films; surface diffusion; Cu; Cu drift-model; SIMS; benzocyclobutene; drift rate; low-κ polymer DVS-BCB; Copper; Current measurement; Dielectric measurements; Dielectric substrates; Equations; Manufacturing; Polymers; Temperature measurement; Temperature sensors; Voltage;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854328
