DocumentCode :
2193416
Title :
A study on edge termination technique at low temperature for high voltage IGBT
Author :
Saitoh, Ryu ; Yoshino, Masao ; Otsuki, Masahito ; Sukurai, K.
Author_Institution :
Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan
fYear :
1996
fDate :
20-23 May 1996
Firstpage :
227
Lastpage :
230
Abstract :
By a simulation study and advanced process technologies, the edge termination structure has been modified for a high power electronic industrial applications and traction. In the rail traction application, the power devices may be subjected to both high voltage and high current at a relative low ambient temperature. In this field, a specified maximum blocking voltage is strongly requested even at the low ambient temperature of -40°C. The temperature dependence of the blocking voltage is strongly dependent on the edge termination structure. We developed a high voltage IGBT having a lower temperature dependence of the blocking voltage, which has an edge termination with a semi-resistive film over field limiting rings with the offset field plates. This technology will spread the application field of IGBT toward higher voltages and more demanding operating conditions
Keywords :
electric breakdown; insulated gate bipolar transistors; power transistors; -40 C; 1800 V; 2500 V; HV device; edge termination technique; field limiting rings; high voltage IGBT; low temperature operation; maximum blocking voltage; offset field plates; rail traction applications; semi-resistive film; temperature dependence; Electronics industry; Insulated gate bipolar transistors; Low voltage; Metalworking machines; Power electronics; Production facilities; Rails; Snubbers; Temperature dependence; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
ISSN :
1063-6854
Print_ISBN :
0-7803-3106-0
Type :
conf
DOI :
10.1109/ISPSD.1996.509487
Filename :
509487
Link To Document :
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