Inline monitoring of multi-level dual inlaid copper interconnect technologies

Author

Kolagunta, Venkat ; Smith, Brad ; Islam, Rabiul ; Angyal, Matt ; Mendonca, John ; Bartaszewicz, Sarah ; Duraiswami, Nedu ; Jana, Pradeep ; Veeraraghavan, Surya ; Venkatesan, Suresh

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

2000

fDate

2000

Firstpage

247

Lastpage

249

Abstract

A six level manufacturable copper interconnect technology using metal-first dual inlaid integration for a 0.2 μm node is discussed. Various aspects of the technology can be monitored using specially designed resistance measurement structures. Relationship between: (i) inline electrical measurements, (ii) inline physical measurements and (iii) final product characteristics are analyzed and used to window the process flow. This interconnect system can be used to produce microprocessors, SRAMs, and digital signal processors

Keywords

copper; electric resistance measurement; integrated circuit interconnections; process monitoring; 0.2 micron; Cu; in-line monitoring; multilevel dual inlaid copper interconnect technology; process window; resistance measurement; Copper; Dielectrics; Digital signal processors; Electric variables measurement; Electrical resistance measurement; Etching; Fluid flow measurement; Integrated circuit interconnections; Microprocessors; Monitoring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854338

Filename

854338