Title :
The SIMEST: a new EST structure without parasitic thyristor achieved using SIMOX technology
Author :
Sridhar, S. ; Baliga, R.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
A new EST structure, in which the lateral N-channel MOSFET is isolated from the thyristor by using SIMOX technology to eliminate the parasitic thyristor, is presented. This structure exhibits high voltage current saturation beyond the breakdown voltage of the lateral N-channel MOSFET. It is shown with the aid of two-dimensional numerical simulations that the proposed SIMEST has a lower on-state voltage drop than the conventional EST and the IGBT, and an FBSOA comparable to that of an IGBT with identical design rules. Experimental results on the SIMEST fabricated with a 9 mask SIMOX Smart Power process are presented
Keywords :
MOS-controlled thyristors; SIMOX; power semiconductor switches; semiconductor device models; EST structure; FBSOA; MOS gated thyristors; SIMEST; SIMOX technology; current saturation; emitter switched thyristor; lateral N-channel MOSFET; on-state voltage drop; power semiconductor switches; smart power process; two-dimensional numerical simulations; Anodes; Breakdown voltage; Cathodes; Insulated gate bipolar transistors; Isolation technology; MOSFET circuits; Medical simulation; Numerical simulation; Power MOSFET; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509500
