Title :
2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)
Author :
Takahashi, Yoshikazu ; Yoshikawa, Koh ; Soutome, Masayuki ; Fujii, Takeshi ; Ichijyou, Masami ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current Ic=1000 A, Tj =125°C, and the turn-off capability of over 5×Ic
Keywords :
insulated gate bipolar transistors; power supplies to apparatus; semiconductor device packaging; semiconductor device testing; 1000 A; 125 C; 2.5 kV; 4.5 V; DC bias test; PWD chips; collector current; heat shock test; high power flat-packaged RC-IGB; industrial and traction use; low thermal impedance; on-state voltage; power cycling test; power pack IGBT; reliability; side cooling; traction use; turn-off capability; Assembly; Cooling; Electrodes; Impedance; Industrial control; Insulated gate bipolar transistors; Plastic packaging; Production facilities; Research and development; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509502
