Title :
Current sensing IGBT for future intelligent power module
Author :
Kudoh, M. ; Hoshi, Y. ; Momota, S. ; Fujihira, T. ; Sakurai, K.
Author_Institution :
Fuji Electr. Co. Ltd., Matsumoto, Japan
Abstract :
The effect of the structure of current sensing IGBT on the temperature dependence of current sensing ratio has been investigated to improve the accuracy of over-current protection in intelligent power modules. The operation physics of the current sensing IGBT analyzed by computer simulation and experimental results of the improved performance of the current sensing IGBT are presented
Keywords :
circuit analysis computing; digital simulation; electric current measurement; insulated gate bipolar transistors; overcurrent protection; power supplies to apparatus; protection; accuracy; computer simulation; current sensing IGBT; current sensing ratio; intelligent power module; over-current protection; performance; temperature dependence; Circuits; Current measurement; Insulated gate bipolar transistors; Multichip modules; Physics; Production facilities; Protection; Research and development; Temperature dependence; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509503
