Title :
A new single ended sense amplifier for low voltage embedded EEPROM non volatile memories
Author :
Papaix, Caroline ; Daga, Jean Michel
Author_Institution :
Design Technol. Dept., ATMEL ROUSSET, France
Abstract :
A new single ended sense amplifier is presented in this paper. It is based on a very simple direct current-voltage conversion. It has been designed in standard CMOS process for embedded non-volatile memories. Its performances are compared to one of the actually most integrated sense amplifiers, based on differential structures. A 40% faster access time has been obtained at 1.8V.
Keywords :
CMOS memory circuits; EPROM; differential amplifiers; low-power electronics; 1.8 V; CMOS; access time; differential structures; direct current-voltage conversion; embedded EEPROM nonvolatile memories; low voltage memories; most integrated sense amplifiers; single ended sense amplifier; CMOS process; Differential amplifiers; EPROM; Energy consumption; Flash memory; Integrated circuit reliability; Logic; Low voltage; Nonvolatile memory; Testing;
Conference_Titel :
Memory Technology, Design and Testing, 2002. (MTDT 2002). Proceedings of the 2002 IEEE International Workshop on
Print_ISBN :
0-7695-1617-3
DOI :
10.1109/MTDT.2002.1029776
