DocumentCode
2195149
Title
High power 6-18 GHz transfer switch using HMIC
Author
Onno, P. ; Jain, N. ; Souchuns, C. ; Goodrich, J.
Author_Institution
M/A-COM Inc., Lowell, MA, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
79
Abstract
A 6-18 GHz transfer switch is fabricated by a batch process technology, the HMIC (Heterolithic Microwave Integrated Circuit) process, and uses shunt-only silicon diodes. The switch emulates a commensurate-line bandpass filter and has insertion loss less than 2.0 dB with greater than 32 dB isolation and CW power handling in excess of 6 Watts.<>
Keywords
MMIC; equivalent circuits; semiconductor switches; silicon; solid-state microwave devices; 2 dB; 6 W; 6 to 18 GHz; HMIC; SHF; Si; batch process technology; heterolithic microwave integrated circuit; shunt-only Si diodes; transfer switch; Band pass filters; Diodes; Insertion loss; Integrated circuit technology; Isolation technology; Microwave integrated circuits; Microwave technology; Silicon; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335357
Filename
335357
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