Title :
67-GHz static frequency divider using 0.2-/spl mu/m self-aligned SiGe HBTs
Author :
Washio, K. ; Hayami, R. ; Ohue, E. ; Oda, K. ; Tanabe, M. ; Shimamoto, H. ; Kondo, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A 67-GHz 1/4 static frequency divider using a 0.2-/spl mu/m self-aligned selective-epitaxial-growth SiGe HBT was developed. This is among the highest operating frequencies for static dividers reported for any semiconductor technology, yet the power consumption of the divider is 1/5 that of comparable dividers.
Keywords :
Ge-Si alloys; bipolar MIMIC; frequency dividers; heterojunction bipolar transistors; millimetre wave frequency convertors; semiconductor materials; 0.2 micron; 67 GHz; EHF; SiGe; power consumption; selective-epitaxial-growth HBT; self-aligned SiGe HBTs; static frequency divider; Capacitance; Circuits; Cutoff frequency; Electrodes; Frequency conversion; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; Master-slave; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854410
