Title :
A 0.5-16 GHz capacitively coupled HBT medium power amplifier MMIC with active bias regulation
Author :
Kobayashi, K.W. ; Oki, A.K. ; Lammert, M. ; Gutierrez-Aitken, A. ; Kaneshiro, E. ; Grossman, P.C. ; Sato, K. ; Block, T.R. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This work describes a 0.5-16 GHz capacitively coupled HBT medium power distributed amplifier targeted for 10 Gb/s fiber-optic transmitter applications. The amplifier obtains a nominal 8-9 dB gain from 500 MHz to 16 GHz with frequency capability down to baseband, and delivers as much as 19 dBm of output power. With a 10 Gb/s PRBS signal applied, the MMIC obtains a peak-to-peak output voltage of >3 V with a clear eye opening while consuming a Pdc of only 420 mW or half the dc power of previous HBT mod driver ICs.
Keywords :
MMIC power amplifiers; SONET; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; microwave photonics; optical fibre communication; optical transmitters; wideband amplifiers; 0.5 to 16 GHz; 10 Gbit/s; 420 mW; 8 to 9 dB; HBT; PRBS signal; active bias regulation; capacitively coupled amplifiers; distributed amplifier; eye opening; fiber-optic transmitter applications; frequency capability; medium power amplifier MMIC; output power; peak-to-peak output voltage; Baseband; Distributed amplifiers; Frequency; Gain; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Transmitters; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854440
