Title :
High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications
Author :
Nagaoka, M. ; Inoue, T. ; Kawakyu, K. ; Obayashi, S. ; Kayano, H. ; Takagi, E. ; Tanabe, Y. ; Yoshimura, M. ; Ishida, K. ; Kitaura, Y. ; Uchitomi, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A monolithic GaAs power amplifier IC using refractory WN/sub xW self-aligned gate power MESFETs has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system. The power amplifier operates with high efficiency and low distortion with a single low voltage supply of 2.7-3.0 V, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.7 dBm and a high power-added efficiency of 24.2% were attained at 3 V for 1.9-GHz /spl pi4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power was -58 dBc at 600 kHz apart.<>
Keywords :
III-V semiconductors; MMIC; cordless telephone systems; digital radio systems; field effect integrated circuits; gallium arsenide; microwave amplifiers; personal communication networks; phase shift keying; power amplifiers; ultra-high-frequency amplifiers; 1.9 GHz; 2.7 to 3.0 V; 24.2 percent; GaAs; MMIC amplifier; QPSK; adjacent channel leakage power; breakdown voltage; digital mobile communication applications; drain knee voltage; low voltage supply; personal handy phone system; power MESFET; power-added efficiency; quadrature phase shift keying; refractory WN/sub xW self-aligned gate; transconductance; Digital integrated circuits; Gallium arsenide; High power amplifiers; Knee; Low voltage; MESFET integrated circuits; Mobile communication; Monolithic integrated circuits; Power amplifiers; Quadrature phase shift keying;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335487
